High-performance stretchable thin-film transistor and design approach to mitigating strain effect: Electronics with the ability to be bent, stretched, compressed, and deformed into arbitrary shapes, can enable a new paradigm of many transformative applications, ranging from human-machine interface to health monitoring and conformal displays. Intrinsically stretchable technology, which leverages elastomeric electronic materials, offers a viable pathway to realizing this paradigm.
Large-area thin-film-transistors (TFTs) play a central role in intrinsically stretchable electronics. Recently, large-area, stretchable carbon nanotube thin-film transistors (CNT-TFTs) have pushed the channel length down to 10 µm, while maintaining filed-effect mobility of 14 cm2/V∙s . This performance enhancement brings the technology from the sub-kilo-Hertz to the mega-Hertz domain, opening a new design space for sensing and display applications.
One remaining critical challenge is the considerable effect of strain deformation on device characteristics, particularly on transistor on-current and transconductance . Moreover, this effect is highly dependent on the direction in which the strain is applied. In practice, with strains being both unpredictable and subject to change over time, this poses a significant hurdle in the circuit and system design for stretchable technologies. In this work, we investigate the impact of strain on device performance and demonstrate a circular transistor design to effectively mitigate the effects of strain on electrical characteristics. The strain-induced change in on-current is significantly reduced from 56% to 3% at 30% strain. The finite-element simulation shows this is achieved by counteracting the performance variations observed across different segments of a 360o transistor channel. [Nature 24] [IEDM 23 (top ranked student paper)] [TED 23 (invited)]